首頁>HY57V161610ET-15I>規(guī)格書詳情
HY57V161610ET-15I中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多HY57V161610ET-15I規(guī)格書詳情
DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.
FEATURES
? Single 3.0V to 3.6V power supply
? All device pins are compatible with LVTTL interface
? JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin
pitch
? All inputs and outputs referenced to positive edge of system
clock
? Data mask function by UDQM/LDQM
? Internal two banks operation
? Auto refresh and self refresh
? 4096 refresh cycles / 64ms
? Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
? Programmable CAS Latency ; 1, 2, 3 Clocks
產(chǎn)品屬性
- 型號(hào)：
HY57V161610ET-15I
- 制造商：
HYNIX
- 制造商全稱：
Hynix Semiconductor
- 功能描述：
2 Banks x 512K x 16 Bit Synchronous DRAM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HY |
23+ |
NA/ |
752 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
HYNIX/海力士 |
24+ |
TSOP |
20000 |
不忘初芯-只做原裝正品 |
詢價(jià) | ||
HY |
23+ |
TSOP |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
HYNIX |
850 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | ||||
HYNIX |
2016+ |
TSSOP |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
HY |
24+ |
TSOP |
752 |
詢價(jià) | |||
HYNIX |
TSOP |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
HYNIX |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
HYNIX |
24+ |
TSSOP |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
HYNIX |
19+ |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) |
