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HY628100BLLT1

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100BLLT1-E

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100BLLT1-I

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HM628100I

WideTemperatureRangeVersion8MSRAM(1024-kwordx8-bit)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HY628100A

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

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HY628100AG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

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HY628100ALG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

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HY628100ALLG

128Kx8bitCMOSSRAM

DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused

HynixHynix Semiconductor

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HY628100B

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100B-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100B-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100BLG

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100BLG-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLG-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

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HY628100BLLG

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLLG-E

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY628100BLLG-I

128Kx8bit5.0VLowPowerCMOSslowSRAM

DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細參數(shù)

  • 型號:

    HY628100BLLT

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    128K x8 bit 5.0V Low Power CMOS slow SRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
HYUNDAI
23+
TSOP
3965
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
HY
1922+
TSOP
9865
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
詢價
專營HYNIX
23+
TSOP
3500
詢價
專營HYNIX
22+
TSOP
30000
十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!
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HYNIX
2023+
TSOP32
3768
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價
HYUNDAI
23+
TSOP
5000
原裝正品,假一罰十
詢價
HY
1815+
TSOP
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
HY
2023+
TSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
HY
24+
TSOP
35200
一級代理/放心采購
詢價
HYUNDAI
23+
TSOP
39299
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
詢價
更多HY628100BLLT供應(yīng)商 更新時間2025-1-7 11:09:00