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IDT70V631S12BC

HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

IDT70V631S12BCI

HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V631S12BC

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BF

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BFI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號:

    IDT70V631S12BC

  • 功能描述:

    IC SRAM 4MBIT 12NS 256BGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類型:

    EEPROM

  • 存儲(chǔ)容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IDT
23+
256-CABGA(17x17)
36430
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
24+
256BGA
4492
原裝現(xiàn)貨
詢價(jià)
IDT
22+
256CABGA
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
256CABGA
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
256CABGA
9000
原裝正品,支持實(shí)單
詢價(jià)
IDT
23+
QFP
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
IDT
2023+
QFP
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
IDT
0935+
QFP
1
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
IDT
22+
QFP
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價(jià)
更多IDT70V631S12BC供應(yīng)商 更新時(shí)間2024-12-29 10:50:00