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IDT70V631S12BFI

HIGH-SPEED 3.3V 256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

IDT

Integrated Device Technology, Inc.

70V631S12BC

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BCI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BF

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12BFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12BFI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12PRFG

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V631easilyexpandsdatabuswidthto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V631S12PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V631S12PRFGI

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V631S12BC

HIGH-SPEED3.3V256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT70V631S12BFI

  • 功能描述:

    IC SRAM 4MBIT 12NS 208FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類型:

    EEPROM

  • 存儲(chǔ)容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
23+
208-CABGA(15x15)
71890
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
22+
208CABGA (15x15)
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
208CABGA (15x15)
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
208CABGA (15x15)
9000
原裝正品,支持實(shí)單
詢價(jià)
IDT
24+
208FBGA
3372
原裝現(xiàn)貨
詢價(jià)
IDT
23+
128TQFP(PK12
9526
詢價(jià)
IDT
20+
QFP
500
樣品可出,優(yōu)勢(shì)庫(kù)存歡迎實(shí)單
詢價(jià)
IDT
23+
QFP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IDT
23+
QFP
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多IDT70V631S12BFI供應(yīng)商 更新時(shí)間2025-1-16 17:23:00