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IDT70V659S12BF

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S12BF

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S12BFI

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

IDT70V659S12BFI

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDT

Integrated Device Technology, Inc.

70V659S12BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12BCI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12BF

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12BFGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12BFGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12BFI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V659S12DRGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V659S12DRGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號:

    IDT70V659S12BF

  • 功能描述:

    IC SRAM 4MBIT 12NS 208FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應商型號品牌批號封裝庫存備注價格
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24+
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3600
大量現(xiàn)貨庫存,提供一站式服務!
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2978
100%全新原裝公司現(xiàn)貨供應!隨時可發(fā)貨
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23+
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1004
全新原裝現(xiàn)貨
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24+
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6980
原裝現(xiàn)貨,可開13%稅票
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2021+
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5647
只做原裝假一罰十
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23+
NA
19960
只做進口原裝,終端工廠免費送樣
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IDT
22+
BGA
5000
全新原裝現(xiàn)貨!自家?guī)齑?
詢價
更多IDT70V659S12BF供應商 更新時間2024-11-6 17:06:00