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IDT71V016SA12PHI

包裝：托盤(pán) 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V016SA12PHI8

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V016SA12PHI8

包裝：托盤(pán) 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BF

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BFG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BFG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12BFGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12BFGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BFI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12PHG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12PHGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12PHGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12YG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12YG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12YGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12YGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

IDT71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IDT71V016SA12PHI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    托盤(pán)

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲(chǔ)容量：

    1Mb（64K x 16）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 寫(xiě)周期時(shí)間 - 字，頁(yè)：

    12ns

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    44-TSOP（0.400"，10.16mm 寬）

  • 供應(yīng)商器件封裝：

    44-TSOP II

  • 描述：

    IC SRAM 1MBIT PARALLEL 44TSOP II

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
06+
原廠原裝
4233
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IDT
23+
TSOP
9526
詢價(jià)
IDT
23+
44-TSOPII
39257
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
IDT
23+
TSOP
4000
特價(jià)庫(kù)存
 詢價(jià)
IDT
2020+
TSOP
348
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
IDT
2339+
TSSOP
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
IDT
23+
TSSOP
5000
原裝正品,假一罰十
 詢價(jià)
IDT
2016+
SSOP
6000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
IDT
04+
TSOP
197
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
 詢價(jià)
IDT
22+
TSSOP
2987
絕對(duì)全新原裝現(xiàn)貨供應(yīng)!
 詢價(jià)
更多IDT71V016SA12PHI供應(yīng)商 更新時(shí)間2024-11-14 17:08:00

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