首頁>IDT71V3557S80BG>規(guī)格書詳情
IDT71V3557S80BG中文資料IDT數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
IDT71V3557S80BG |
功能描述 | 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs |
文件大小 |
996.97 Kbytes |
頁面數(shù)量 |
28 頁 |
生產(chǎn)廠商 | Integrated Device Technology, Inc. |
企業(yè)簡稱 |
IDT |
中文名稱 | Integrated Device Technology, Inc.官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-1-18 9:08:00 |
相關(guān)芯片規(guī)格書
更多- IDT71V3557S
- IDT71V3557S75BQ
- IDT71V3557S75PFI
- IDT71V3557S75PF
- IDT71V3557S75BGI
- IDT71V3557S75BQI
- IDT71V3557S75BG
- IDT71V3556XSA200BQGI
- IDT71V3556XSA166BQG
- IDT71V3556XSA200BGGI
- IDT71V3557S
- IDT71V3556XSA166PFGI
- IDT71V3556XSA166PFG
- IDT71V3556XSA200BQG
- IDT71V3556XSA200PFG
- IDT71V3557S75PFG
- IDT71V3556XSA200BGG
- IDT71V3557S75BQG
IDT71V3557S80BG規(guī)格書詳情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
產(chǎn)品屬性
- 型號:
IDT71V3557S80BG
- 功能描述:
IC SRAM 4MBIT 80NS 119BGA
- RoHS:
否
- 類別:
集成電路(IC) >> 存儲器
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
2,000
- 系列:
MoBL® 格式 -
- 存儲器:
RAM
- 存儲器類型:
SRAM - 異步
- 存儲容量:
16M(2M x 8,1M x 16)
- 速度:
45ns
- 接口:
并聯(lián)
- 電源電壓:
2.2 V ~ 3.6 V
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
48-VFBGA
- 供應(yīng)商設(shè)備封裝:
48-VFBGA(6x8)
- 包裝:
帶卷(TR)
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Renesas Electronics Corporatio |
23+/24+ |
165-TBGA |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價 | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
IDT, Integrated Device Technol |
24+ |
165-CABGA(13x15) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
23+ |
119BGA |
9526 |
詢價 | |||
IDT, Integrated Device Technol |
21+ |
165-LBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
IDT |
23+ |
119-PBGA(14x22) |
73390 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
24+ |
119-BGA |
6733 |
原裝現(xiàn)貨 |
詢價 | ||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT, Integrated Device Techno |
23+ |
165-CABGA13x15 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IDT, Integrated Device Techno |
23+ |
165-CABGA13x15 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 |