首頁 >IDT71V65803S100BQG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W( | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT |
詳細參數(shù)
- 型號：
IDT71V65803S100BQG
- 功能描述：
IC SRAM 9MBIT 100MHZ 165FBGA
- RoHS：
是
- 類別：
集成電路(IC) >> 存儲器
- 系列：
-
- 標準包裝：
72
- 系列：
- 格式 -
- 存儲器：
RAM
- 存儲器類型：
SRAM - 同步
- 存儲容量：
9M（256K x 36）
- 速度：
75ns
- 接口：
并聯(lián)
- 電源電壓：
3.135 V ~ 3.465 V
- 工作溫度：
-40°C ~ 85°C
- 封裝/外殼：
100-LQFP
- 供應商設備封裝：
100-TQFP（14x14）
- 包裝：
托盤
- 其它名稱：
71V67703S75PFGI
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
165-CABGA(13x15) |
9550 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
24+ |
165-FBGA |
6122 |
原裝現(xiàn)貨 |
詢價 | ||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT |
21+ |
165CABGA (13x15) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IDT |
23+ |
165CABGA (13x15) |
9000 |
原裝正品，支持實單 |
詢價 | ||
IDT |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IDT |
23+ |
100TQFP |
9526 |
詢價 | |||
IDT |
24+ |
QFP100L |
654 |
詢價 | |||
IDT |
22+ |
QFP100L |
492 |
原裝現(xiàn)貨熱賣中,提供一站式真芯服務 |
詢價 | ||
IDT |
2339+ |
QFP100L |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 |
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