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IDT71V67603S150BQG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150BQGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

71V67603S150BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S150PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V67603S150BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S150PFI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
IDT
23+
165-CABGA(13x15)
4030
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
24+
165-FBGA
3483
原裝現(xiàn)貨
詢價
IDT
22+
165CABGA (13x15)
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
165CABGA (13x15)
13880
公司只售原裝,支持實單
詢價
IDT
23+
165CABGA (13x15)
9000
原裝正品,支持實單
詢價
IDT
23+
100TQFP
9526
詢價
IDT
24+
TQFP
101
詢價
IDT
22+
QFP
2000
原裝正品現(xiàn)貨
詢價
IDT
BGAQFP
6688
15
現(xiàn)貨庫存
詢價
更多IDT71V67603S150BQ供應(yīng)商 更新時間2025-1-4 9:02:00