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IGT60R190D1S

Marking：60S190D1；Package：PG-HSOF-8-3；600V CoolGaN??enhancement-mode Power Transistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforstandardgradeapplicationsaccordingtoJEDECstandards

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

60R190D1

600VCoolGaN?enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

60R190D1

600VCoolGaN??enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGLD60R190D1

600VCoolGaN??enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGLD60R190D1S

600VCoolGaN?enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforstandardgradeapplicationsaccordingtoJEDEC Standards

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGLR60R190D1

600VCoolGaN?enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGT60R190D1

600VCoolGaN?enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
HSOF-8-3
9203
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
Infineon(英飛凌)
2447
PG-HSOF-8-3
115000
2000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Infineon/英飛凌
2021+
PG-HSOF-8-3
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
24+
PG-HSOF-8-3
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
2023+
PG-HSOF-8-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
21+
PG-HSOF-8-3
6820
只做原裝,質(zhì)量保證
 詢價
Infineon/英飛凌
21+
PG-HSOF-8-3
13880
公司只售原裝,支持實單
 詢價
Infineon/英飛凌
23+
PG-HSOF-8-3
10000
原裝正品，支持實單
 詢價
Infineon/英飛凌
23+
PG-HSOF-8-3
25630
原裝正品
 詢價
Infineon/英飛凌
PG-HSOF-8-3
6000
詢價
更多IGT60R190D1S供應(yīng)商 更新時間2025-3-20 13:43:00

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