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IXFT30N60Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurr

IXYS

IXYS Corporation

IXFT30N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFV30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFV30N60PS

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXGH30N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)

IXYS

IXYS Corporation

IXGH30N60A

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)

IXYS

IXYS Corporation

IXGH30N60B

HiPerFASTTMIGBT

Features ?Internationalstandardpackages JEDECTO-268surface mountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOS?process ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGM30N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)

IXYS

IXYS Corporation

IXGM30N60A

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)

IXYS

IXYS Corporation

IXSH30N60

LowVCE(sat)IGBT,HighSpeedIGBT

LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IHW30N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS DuoPack 600V 30A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
17048
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。
 詢價(jià)
英飛翎
17+
TO-247
31518
原裝正品 可含稅交易
 詢價(jià)
INFINEON
24+
PG-TO247-3
8866
詢價(jià)
INFINEO
2020+
TO-247
10
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
INFINEON
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
INFINEON
23+
TO247
8600
全新原裝現(xiàn)貨
 詢價(jià)
INF
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON
25+23+
TO-247
34972
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
INFINEON
20+
TO-247
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
更多IHW30N60T供應(yīng)商 更新時(shí)間2025-5-8 14:21:00

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