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IMBG120R030M1H

EiceDRIVER? 1ED314xMU12F (1ED-X3 Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R030M1

FinaldatasheetCoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=70AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R030M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=78AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZ120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R030M1H

SiCN-ChannelMOSFET

FEATURES ·VDSS=1200VatTJ=25°C ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=30mΩ（TYP.）@VGS=18V;TJ=25℃ ·Verylowswitchinglosses ·EasytoParallelandSimpletoDrive APPLICATIONS ·Generalpurposedrives(GPD) ·EV-Charging ·OnlineUPS/IndustrialUPS ·Stringinverters ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IMZA120R030M1H

CoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=70AatTc=25°C ?RDS(on)=30mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecan

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
TO263-7
1524
原廠直供,支持賬期,免費(fèi)供樣,技術(shù)支持
 詢價(jià)
Infineon(英飛凌)
23+
TO263-7
12316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
英飛凌
21+
PG-TO263-7
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
23+
TO-263-7
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
INFINEON
23+
PG-TO263-7
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價(jià)
Infineon
23+
PG-TO263-7
15500
英飛凌優(yōu)勢(shì)渠道全系列在售
 詢價(jià)
INFINEON
23+
GOOP
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
24+
TO263-7
15000
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
INFINEON
23+
GOOP
7000
詢價(jià)
INFINEON/英飛凌
2021+
45000
十年專營原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多IMBG120R030M1H供應(yīng)商 更新時(shí)間2025-1-11 8:12:00

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