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IMW120R030M1H

Marking：12M1H030；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R030M1

FinaldatasheetCoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=70AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R030M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=78AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R030M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=69AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

EiceDRIVER?1ED314xMU12F(1ED-X3Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG120R030M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZ120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R030M1H

SiCN-ChannelMOSFET

FEATURES ·VDSS=1200VatTJ=25°C ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=30mΩ（TYP.）@VGS=18V;TJ=25℃ ·Verylowswitchinglosses ·EasytoParallelandSimpletoDrive APPLICATIONS ·Generalpurposedrives(GPD) ·EV-Charging ·OnlineUPS/IndustrialUPS ·Stringinverters ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IMZA120R030M1H

CoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=70AatTc=25°C ?RDS(on)=30mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecan

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
21+
TO-247
500
規(guī)格型號：IMW120R030M1HXKSA1 封裝規(guī)格：IMW120R030M1HXKSA1安裝類型：表面貼裝型應(yīng)用領(lǐng)域：汽車電子輸出電流：5批號：22+ IMW120R030M1HXKSA1
 詢價
INFINEON
2年內(nèi)
TO-247
16500
英博爾原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商
 詢價
Infineon(英飛凌)
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
英飛凌
21+
PG-TO247-3
6000
絕對原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
2112+
PG-TO247-3
115000
240個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
Infineon/英飛凌
21+
PG-TO247-3
6000
原裝現(xiàn)貨正品
 詢價
Infineon/英飛凌
21+
PG-TO247-3
10000
原裝,品質(zhì)保證,請來電咨詢
 詢價
Infineon/英飛凌
2021+
PG-TO247-3
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
23+
PG-TO247-3
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
2023+
PG-TO247-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
更多IMW120R030M1H供應(yīng)商 更新時間2025-2-3 9:39:00

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