首頁(yè) >IMC020FLSA>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IMC020FLSA | SERIES 2 FLASH MEMORY CARDS iMC002FLSA, iMC004FLSA, iMC010FLSA, iMC020FLSA Intel’sSeries2FlashMemoryCardfacilitateshigh-performancediskemulationinmobilePCsanddedicatedequipment.ManufacturedwithIntel’sETOXTMIII0.8m,FlashFileMemorydevices,theSeries2Cardallowscodeanddataretentionwhileerasingand/orwritingotherblocks.Additionally,theS | IntelIntel Corporation 英特爾 | Intel | |
HEXFETTRANSISTORSN-CHANNELHEXDIP 50Volt,0.10Ohm,1-WattHEXDIP HEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedevicerugg | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | TFUNKVishay Telefunken 威世威世(VISHAY)集團(tuán) | TFUNK | ||
PowerMOSFET FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETRPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR020,SiHFR020) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
IMC020FLSA
- 制造商:
INTEL
- 制造商全稱:
Intel Corporation
- 功能描述:
SERIES 2 FLASH MEMORY CARDS iMC002FLSA, iMC004FLSA, iMC010FLSA, iMC020FLSA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TE |
22+ |
detail |
20000 |
深圳原裝現(xiàn)貨正品有單價(jià)格可談 |
詢價(jià) | ||
TE/泰科 |
23+ |
detail |
36880 |
只做原裝,QQ詢價(jià)有詢必回 |
詢價(jià) | ||
TE |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TE |
11+ |
SMD |
60 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
TE |
23+ |
SMD |
10000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
TE/泰科 |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
TE/泰科 |
2420+ |
/ |
173071 |
一級(jí)代理,原裝正品! |
詢價(jià) | ||
IMC-0402-01-.0082-5%RC8 |
10000 |
10000 |
詢價(jià) | ||||
VISHAY/威世 |
2022+ |
SMD |
190000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SMD |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
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