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IMTA65R060M2H

SiC MOSFET CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMTA65R060M2H

SiC MOSFET CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG65R060M2H

IMBG65R060M2H

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMLT65R060M2H

SiCMOSFETCoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMT65R060M2H

CoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW65R060M2H

SiCMOSFETCoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA65R060M2H

SiCMOSFETCoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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8890
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23+
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65480
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36520
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9200
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更多IMTA65R060M2H供應(yīng)商 更新時(shí)間2024-12-27 14:02:00

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