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IRFF110

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF110

IM-CHANIMELPOWERMOSFETsTO-39PACKAGE

TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFG110

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

IRFG110

14LEADDUALINLINEQUAD

SEME-LAB

Seme LAB

IRFG110

SimpleDriveRequirements

IRF

International Rectifier

IRFG110

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

IRFL110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

IRFL110PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    INA110KU

  • 功能描述：

    儀表放大器 Fast-Settling FET-In Very High Accuracy

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 輸入補償電壓：

    150 V

  • 最大輸入電阻：

    10 kOhms

  • 共模抑制比（最小值）：

    88 dB

  • 工作電源電壓：

    2.7 V to 36 V

  • 電源電流：

    200 uA

  • 最大工作溫度：

    + 125 C

  • 最小工作溫度：

    - 40 C

  • 封裝/箱體：

    MSOP-8

  • 封裝：

    Bulk

供應商型號品牌批號封裝庫存備注價格
Texas Instruments
24+
SOIC16
23927
TI優(yōu)勢主營型號-原裝正品
 詢價
TI
23+
SOP16
5000
原裝正品,假一罰十
 詢價
TI
24+
SOIC16
5630
TI一級代理原廠授權渠道實單支持
 詢價
TI
09+
SOIC16
1777
TI原裝/深圳庫存c5
 詢價
BB
2020+
SOP
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
TI/德州儀器
23+
SOIC16
18204
原裝正品代理渠道價格優(yōu)勢
 詢價
TI/德州儀器
21+
SOIC16
256
原裝現(xiàn)貨
 詢價
BURR-BROWN
24+
SOP
100
只做原廠渠道 可追溯貨源
 詢價
BURR-BROWN
23+
SOP
22800
原盒原標,正品現(xiàn)貨,誠信經(jīng)營,假一罰十
 詢價
Texas Instruments
25+
SOIC16
18000
TI優(yōu)勢渠道,大量原裝庫存現(xiàn)貨,交期快,歡迎詢價。
 詢價
更多INA110KU供應商 更新時間2025-3-31 17:44:00

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