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IRFD110

1A,100V,0.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°COperatingTemperature ?Fastswitchingandeaseofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Third

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE110

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE110

SimpleDriveRequirements

IRF

International Rectifier

IRFE110

MultipleSmall-SignalTransistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRFF110

3.5A,100V,0.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF110

PowerMOSField-EffectTransistors

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice

GESS

GE Solid State

詳細(xì)參數(shù)

  • 型號(hào)：

    INA110KU

  • 功能描述：

    儀表放大器 Fast-Settling FET-In Very High Accuracy

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 輸入補(bǔ)償電壓：

    150 V

  • 最大輸入電阻：

    10 kOhms

  • 共模抑制比（最小值）：

    88 dB

  • 工作電源電壓：

    2.7 V to 36 V

  • 電源電流：

    200 uA

  • 最大工作溫度：

    + 125 C

  • 最小工作溫度：

    - 40 C

  • 封裝/箱體：

    MSOP-8

  • 封裝：

    Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Texas Instruments
24+
SOIC16
23927
TI優(yōu)勢(shì)主營(yíng)型號(hào)-原裝正品
 詢價(jià)
TI
23+
SOP16
5000
原裝正品,假一罰十
 詢價(jià)
TI
24+
SOIC16
5630
TI一級(jí)代理原廠授權(quán)渠道實(shí)單支持
 詢價(jià)
TI
09+
SOIC16
1777
TI原裝/深圳庫(kù)存c5
 詢價(jià)
BB
24+
SOP
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
TI/德州儀器
23+
SOIC16
18204
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
BURR-BROWN
24+
SOP
100
只做原廠渠道 可追溯貨源
 詢價(jià)
BURR-BROWN
23+
SOP
22800
原盒原標(biāo),正品現(xiàn)貨,誠(chéng)信經(jīng)營(yíng),假一罰十
 詢價(jià)
Texas Instruments
25+
SOIC16
18000
TI優(yōu)勢(shì)渠道,大量原裝庫(kù)存現(xiàn)貨,交期快,歡迎詢價(jià)。
 詢價(jià)
TI/德州儀器
2021+
SOIC16
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
更多INA110KU供應(yīng)商 更新時(shí)間2025-5-6 17:26:00

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