首頁 >INA210CIRSWT>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
INA210CIRSWT | Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors | TI1Texas Instruments 德州儀器 | TI1 | |
INA210CIRSWT | Voltage Output, Low- or High-Side Measurement, Bidirectional | TI1Texas Instruments 德州儀器 | TI1 | |
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
OCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
VCTCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin | IRF International Rectifier | IRF | ||
0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | HARRIS Harris Corporation | HARRIS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R??RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Texas Instruments |
24+ |
10-UFQFN |
25000 |
in stock線性IC-原裝正品 |
詢價(jià) | ||
TI(德州儀器) |
23+ |
QFN-10(1 |
1083 |
深耕行業(yè)12年,可提供技術(shù)支持。 |
詢價(jià) | ||
TI/德州儀器 |
18+ |
UQFN-10 |
3250 |
只做進(jìn)口原裝訂貨貨期短到貨快 |
詢價(jià) | ||
Texas Instruments |
24+ |
10-UQFN(1.8x1.4) |
53200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
TI(德州儀器) |
2117+ |
UQFN-10(1.8x1.4) |
315000 |
250個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長 |
詢價(jià) | ||
TI |
20+ |
QFN-10 |
500 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Texas |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
TI |
22+ |
10UQFN (1.4x1.8) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
TI |
21+ |
10UQFN (1.4x1.8) |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
TI/德州儀器 |
23+ |
10-uqfn |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) |
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