首頁 >INA214BQDCKTTL>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors 1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: – | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors 1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: – | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors 1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: – | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A) VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPowerMOSFET VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.79A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolder | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI(德州儀器) |
23+ |
SC-70-6 |
907 |
深耕行業(yè)12年,可提供技術支持。 |
詢價 | ||
TI/德州儀器 |
21+ |
SC70-6 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
TI/德州儀器 |
22+ |
SC70-6 |
8880 |
原裝認準芯澤盛世！ |
詢價 | ||
TI/德州儀器 |
23+ |
SC70-6 |
2000 |
原裝正品，支持實單 |
詢價 | ||
TI/德州儀器 |
23+ |
SC70-6 |
9990 |
正規(guī)渠道,只有原裝! |
詢價 | ||
TI/德州儀器 |
21+ |
SC70-6 |
9990 |
只有原裝 |
詢價 | ||
TEXAS INSTRUMENTS |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
TI/德州儀器 |
23+ |
SC70-6 |
5000 |
只有原裝,歡迎來電咨詢! |
詢價 | ||
TI |
23+ |
NA |
6667 |
線性放大器 |
詢價 | ||
TI/德州儀器 |
21+ |
SC70-6 |
9990 |
只有原裝 |
詢價 |
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