零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
OCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
VCTCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin | IRF International Rectifier | IRF | ||
0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | HARRIS Harris Corporation | HARRIS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R??RANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealedTO39 N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=200V ID=2.25A RDS(ON)=1.5? | SEME-LAB Seme LAB | SEME-LAB |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IP |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
IP |
24+ |
2173 |
公司大量全新正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | |||
原廠 |
2023+ |
模塊 |
600 |
專營模塊,繼電器,公司原裝現(xiàn)貨 |
詢價(jià) | ||
IP |
23+ |
MODULE |
69277 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
IP |
23+ |
模塊 |
620 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IP |
23+ |
MODULE |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IP |
2015 |
模塊 |
300 |
十七年VIP會(huì)員,誠信經(jīng)營,一手貨源,原裝正品可零售! |
詢價(jià) | ||
VICOR |
24+ |
模塊 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | ||
COMVERTER |
18+ |
MODULE |
12 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
COMVERTER |
23+ |
MODULE |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
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