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IPD100N04S4-02

isc N-Channel MOSFET Transistor

·FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):4mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·UltraLowOn-resistance ·Fa

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD100N04S4L-02

Marking:4N04L02;Package:PG-TO252-3-313;OptiMOS?-T2 Power-Transistor

Features ?OptiMOSTM-powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-LogicLevel ?AECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?GreenProduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD105N03LG

OptiMOS3 Power-Transistor

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD10N03LA

Marking:10N03LA;Package:TO-252-3-11;OptiMOS?2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD10N03LA

Marking:10N03LA;Package:TO-252-3-11;OptiMOS2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD10N03LAG

OptiMOS?2 Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD100N04S4-02

OptiMOS-T2 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD100N06S4-03

OptiMOS-T2 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD105N04LG

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    IPD10

  • 功能描述：

    MOSFET N-Channel 40V MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
2021+
SOT-252
17032
原裝進(jìn)口假一罰十
 詢價
Infineon
21+
N/A
5000
確保原裝現(xiàn)貨,實單價格支持!
 詢價
INFINEON/英飛凌
24+
TO-252
1600
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
22+
TO252
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
INFINEON/英飛凌
2152+
TO252
8000
原裝正品假一罰十
 詢價
INFINEON
100000
代理渠道/只做原裝/可含稅
 詢價
INFINEON
22+
TO252
6500
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
INFINEON
23+
TO-252
12800
原盒原包現(xiàn)貨
 詢價
INFINEON
23+
20000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價
更多IPD10供應(yīng)商 更新時間2025-1-16 14:04:00

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