首頁 >IPD12N03LB G>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)12mΩ ID25A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)12mΩ ID12A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)11.5mΩ ID25A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)11.5mΩ ID18.5A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)11.5mΩ ID9A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
OptiMOSBuckconverterseries Feature ?N-Channel ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Idealforfastswitchingbuckconverters | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSBuckconverterseries Feature ?N-Channel ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Idealforfastswitchingbuckconverters | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor OptiMOS?2Power-Transistor Package Marking ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
25VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE |
詳細參數(shù)
- 型號:
IPD12N03LB G
- 功能描述:
MOSFET N-CH 30V 30A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
2012+ |
TO-252 |
12000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
INFINEON |
24+ |
DPAK(TO-252) |
8866 |
詢價 | |||
Infineon |
23+ |
TO-252-3-11 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
I |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
INFINEON |
2018+ |
TO252 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INFINE0N |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
INFINEON |
2017+ |
SOT-252 |
69000 |
原裝正品,誠信經(jīng)營 |
詢價 | ||
I |
2020+ |
SOT-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 |
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