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IPP65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP65R110CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPW65R110CFD

N-ChannelMOSFETTransistor

?DESCRITION ?SuitableforresonantSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤110m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R110CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R110CFD

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Ultra-fastbodydiode ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R110CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R110CFD

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFD

N-ChannelMOSFETTransistor

?DESCRITION ?SuitableforresonantSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤110m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPW65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R110CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R110CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPP65R110CFDA

  • 功能描述：

    MOSFET COOL MOS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
22+
TO-220
3000
進口原裝正品現(xiàn)貨,假一罰十價格合理
 詢價
Infineon(英飛凌)
22+
NA
7000
23+
 詢價
INFINEON
23+
TO-220
16500
一級分銷商!
 詢價
INFINEON
23+
TO-220
5000
原裝正品，支持檢測
 詢價
INFINEON/英飛凌
21+
NA
12500
只做全新原裝公司現(xiàn)貨特價
 詢價
Infineon Technologies
24+
標準
45444
熱賣原裝進口
 詢價
INFINEON/英飛凌
2021+
TO-220F
18246
原裝進口假一罰十
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
2019
TO-220F
19700
INFINEON品牌專業(yè)原裝優(yōu)質
 詢價
INFINEON
23+
TO-220
4000
正規(guī)渠道,只有原裝!
 詢價
更多IPP65R110CFDA供應商 更新時間2024-12-23 9:01:00

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