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IPS50R520CP

CoolMOS Power Transistor

Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: ?HardandswitchingSMPSforserver

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD50R520CP

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤520m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP50R520CP

N-ChannelMOSFETTransistor

DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.52? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA50R520CP

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA50R520CP

CoolMosPowerTransistor

Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) CoolMOSCPisdesignedfor: ?Hard-

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD50R520CP

CoolMosPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD50R520CP

CoolMOSTMPowerTransistor

Package ?LowestfigureofmeritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: ?Hard-&SoftswitchingSMPStopologies ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD50R520CP

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤520m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP50R520CP

N-ChannelMOSFETTransistor

DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.52? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP50R520CP

CoolMOSTMPowerTransistor

CoolMOS?PowerTransistor Features ?LowestfigureofmeritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: ?Hard-&Softs

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPS50R520CP

  • 功能描述：

    MOSFET COOL MOS PWR TRANS 550V 0.520 Ohms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
24+
PG-TO251-3
8866
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INFINE0N
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TO-251
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ON/安森美
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TO-220-3
69820
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INFINEON/英飛凌
21+
TO-251
30000
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INFINEON
1503+
TO251-3
3000
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I
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IPAK
10000
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Infineon
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NA
2118
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INFINEON
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TO251-3
10000
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Infineon Technologies
22+
TO2513 Stub Leads IPak
9000
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Infineon Technologies
21+
TO2513 Stub Leads IPak
13880
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更多IPS50R520CP供應(yīng)商 更新時(shí)間2024-12-23 16:30:00

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