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IPW60R230P6

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤230m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPW60R230P6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R230P6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R230P6_15

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP60R230P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.23? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPW60R230P6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤230m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R230P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R230P6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R230P6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R230P6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R230P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R230P6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R230P6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.23? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R230P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX60R230P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Infineon
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
Infineon
1539+
TO-247
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Infineon
21+
TO-247
9866
詢價
INFINEON/英飛凌
23+
TO-247
11220
英飛凌優(yōu)勢原裝IC,高效BOM配單。
 詢價
INFINEON/英飛凌
23+
NA/
210
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
INFINEON
23+
TO-247
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
INFINEON
23+
TO-247
7000
詢價
Infineon
24+
TO-247
5000
全新原裝正品,現(xiàn)貨銷售
 詢價
更多IPW60R230P6供應(yīng)商 更新時間2025-1-2 11:00:00

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