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IRF3315

PowerMOSFET(Vdss=150V,Rds(on)=0.07ohm,Id=27A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315

N-ChannelMOSFETTransistor

?DESCRITION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤70m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperati

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF3315L

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF3315L

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315LPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315LPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF3315S

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF3315S

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
TO-263-5
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-263-5
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-263-5
7000
詢價(jià)
IR
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
IR
2023+
TO-263
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
IR
24+
TO-263
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IR
14+PBF
TO-263
7000
現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IR3315STRR-ND供應(yīng)商 更新時(shí)間2025-1-20 14:02:00

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