零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF101 | N-Channel Power MOSFETs, 27 A, 60-100V
| FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? ?AdvancedProcessTechnology ?UltraLowOn-Resistance ?Dynamicdv/dtRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
Advanced Process Technology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
Advanced Process Technology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
Advanced Process Technology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
Advanced Process Technology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRF101
- 制造商:
FAIRCHILD
- 制造商全稱:
Fairchild Semiconductor
- 功能描述:
N-Channel Power MOSFETs, 27 A, 60-100V
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
998 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | ||||
IOR |
2020+ |
DIP |
18 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
SOT263 |
6800 |
絕對(duì)原裝!真實(shí)庫(kù)存! |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IR |
23+ |
TO-262 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
1950+ |
TO-220 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
D2-Pak |
8866 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
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相關(guān)庫(kù)存
更多- IRF1010ESPBF
- IRF1010EZLPBF
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- IRF2804S-7PPBF
- IRF2804STRL7PP
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- IRF2805STRLPBF
- IRF2807PBF
- IRF2807STRLPBF
- IRF2807ZLPBF
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- IRF2903ZLPBF
- IRF2903ZSPBF
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