首頁(yè) >IRF1010EZLPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF1010EZLPBF | AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | |
IRF1010EZLPBF | Advanced Process Technology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | |
AUTOMOTIVEMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A?? VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
FullyAvalancheRated Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細(xì)參數(shù)
- 型號(hào):
IRF1010EZLPBF
- 功能描述:
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-262-3 |
185 |
詢(xún)價(jià) | |||
IR |
23+ |
TO-262 |
7750 |
全新原裝優(yōu)勢(shì) |
詢(xún)價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
IR |
23+ |
TO-262-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
IR |
22+23+ |
TO-262 |
15573 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
IR |
2023+ |
TO-262 |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | ||
IR |
21+ |
TO-262 |
35200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) | ||
IR |
11+PBF |
TO-262 |
45 |
優(yōu)勢(shì) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- IRF1010EZPBF
- IRF1010EZSTRLP
- IRF1010NSPBF
- IRF1010ZLPBF
- IRF1010ZSPBF
- IRF1018EPBF
- IRF1018ESPBF
- IRF1018ESTRLPBF-CUTTAPE
- IRF122
- IRF1310NPBF
- IRF1310NSTRLPBF
- IRF1324PBF
- IRF1324SPBF
- IRF1404LPBF
- IRF1404SPBF
- IRF1404ZPBF
- IRF1404ZSTRLPBF
- IRF1405SPBF
- IRF1405STRRPBF
- IRF1405ZL-7PPBF
- IRF1405ZPBF
- IRF1405ZSTRL7PP
- IRF1407PBF
- IRF1407STRRPBF
- IRF1503PBF
- IRF1607PBF
- IRF2204PBF
- IRF240
- IRF250
- IRF2804PBF
- IRF2804SPBF
- IRF2804STRLPBF
- IRF2805SPBF
- IRF2807HR
- IRF2807SPBF
- IRF2807STRRPBF
- IRF2807ZPBF
- IRF2807ZSTRLPBF
- IRF2903ZPBF
- IRF2903ZSTRLP
- IRF2907ZPBF
- IRF2907ZSPBF
- IRF3007SPBF
- IRF-3-1K-10%-B08
- IRF3205PBF
相關(guān)庫(kù)存
更多- IRF1010EZSPBF
- IRF1010NPBF
- IRF1010NSTRLPBF
- IRF1010ZPBF
- IRF1010ZSTRLPBF
- IRF1018ESLPBF
- IRF1018ESTRLPBF
- IRF1104PBF
- IRF130
- IRF1310NSPBF
- IRF1310NSTRLPBF/BKN
- IRF1324S-7PPBF
- IRF1324STRL-7PP
- IRF1404PBF
- IRF1404STRLPBF
- IRF1404ZSPBF
- IRF1405PBF
- IRF1405STRLPBF
- IRF1405STRRPBF-CUTTAPE
- IRF1405ZLPBF
- IRF1405ZSPBF
- IRF1405ZSTRLPBF
- IRF1407STRLPBF
- IRF150
- IRF1503SPBF
- IRF2204LPBF
- IRF2204SPBF
- IRF-242
- IRF2804LPBF
- IRF2804S-7PPBF
- IRF2804STRL7PP
- IRF2805PBF
- IRF2805STRLPBF
- IRF2807PBF
- IRF2807STRLPBF
- IRF2807ZLPBF
- IRF2807ZSPBF
- IRF2903ZLPBF
- IRF2903ZSPBF
- IRF2907ZLPBF
- IRF2907ZS-7PPBF
- IRF2907ZSTRLPBF
- IRF3007STRLPBF
- IRF3205LPBF
- IRF3205SPBF