首頁 >IRF1104SHR>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.009? ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyLogic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
SwitchingModePowerSupply | ISOCOM ISOCOM COMPONENTS | ISOCOM | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
IRF1104SHR
- 制造商:
International Rectifier
- 功能描述:
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
IR |
23+ |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
IR |
23+ |
7000 |
詢價(jià) | ||||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
23+ |
11987 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | |||
IR |
22+ |
NA |
30000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)! |
詢價(jià) |
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