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IRFD120

PowerMOSFET(Vdss=100V,Rds(on)=0.27ohm,Id=1.3A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD120

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecomb

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD120

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD120

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD120PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE120

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe

IRF

International Rectifier

IRFE120

SimpleDriveRequirements

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF120

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
24+
TO-3
10000
詢價
IR
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
IR/MOT
24+
TO-3
1500
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-3
5000
原裝正品,假一罰十
 詢價
IR
23+
TO-3
3000
特價庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
1500
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
HAR
23+
65480
詢價
更多IRF120供應(yīng)商 更新時間2025-4-24 9:00:00

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