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IRF231

N-Channel Power MOSFETs, 12A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF231

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF231

N-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導體

IRF231

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF231

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF231

High Power,High Speed Applications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF231

N-Channel Power Mosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFS231

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS231

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISD231X

SerialInputAlphanumericIndustrialDisplay

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導體

詳細參數(shù)

  • 型號：

    IRF231

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
UNMARKED
新
17
全新原裝 貨期兩周
 詢價
IR
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
MOT
8639
52
公司優(yōu)勢庫存 熱賣中!
 詢價
IR
22+
TO-3
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-3
52726
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
 詢價
IR
23+
TO-3
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-3
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多IRF231供應商 更新時間2025-4-23 16:30:00

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