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IRF251

N-CHANNEL POWER MOSFETS

FEATURES ?LowRds(on) ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半導體

IRF251

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF251

N-CHANNE POWER MOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF251

N-CHANNEL POWER MOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF251

Nanosecond Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP251

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導體

IRFP251

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP251

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP251

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS251

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISCNH251D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

KBPC251

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-25Amperes FEATURES *MetalcaseforMaximumHeatDissipation *Surgeoverloadratings-400Amperes *Lowforwardvoltagedrop

DCCOM

Dc Components

KDV251

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(VCOFORCB,C/PPLL)

VCOFORC/P,CBPLL FEATURES ?LowSeriesResistance:0.6Ω(Max.) ?HighCapacitanceRatio:1.7(Min.)~2.2(Max.)

KECKEC CORPORATION

KEC株式會社

KDV251M

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(VCOFORCB,C/PPLL)

VCOFORC/P,CBPLL FEATURES ?LowSeriesResistance:0.6Ω(Max.) ?HighCapacitanceRatio:1.7(Min.)~2.2(Max.)

KECKEC CORPORATION

KEC株式會社

KDV251M

SILICONEPITAXIALPLANARDIODE

KECKEC CORPORATION

KEC株式會社

KDV251S

SOT-23PACKAGE

VCOFORC/P,CBPLL FEATURES ?LowSeriesResistance:0.6Ω(Max.) ?HighCapacitanceRatio:1.7(Min.)~2.2(Max.)

KECKEC CORPORATION

KEC株式會社

KDV251S

SILICONEPITAXIALPLANARDIODE

KECKEC CORPORATION

KEC株式會社

KSC251J

SealedTactSwitchforSMT

CK-COMPONENTS

C&K Components

KSC251J

SealedTactSwitchforSMT

CK-COMPONENTS

C&K Components

KSC251J

SealedTactSwitchforSMT

CK-COMPONENTS

C&K Components

詳細參數

  • 型號：

    IRF251

  • 制造商：

    Motorola Inc

供應商型號品牌批號封裝庫存備注價格
MOT
05+
原廠原裝
1088
只做全新原裝真實現貨供應
 詢價
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現貨,特價熱賣!
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
MOTOROLA
2023+
TO-3
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
MOTOROLA
21+
TO-3
35210
一級代理/放心采購
 詢價
IR
22+
TO-3
6000
終端可免費供樣,支持BOM配單
 詢價
MOTOROLA
23+
TO-3
50301
##公司主營品牌長期供應100%原裝現貨可含稅提供技術
 詢價
IR
23+
TO-3
8000
專注配單,只做原裝進口現貨
 詢價
IR
23+
TO-3
8000
專注配單,只做原裝進口現貨
 詢價
更多IRF251供應商 更新時間2024-12-23 16:03:00

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