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IRF252

N-CHANNEL POWER MOSFETS

FEATURES ?LowRds(on) ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF252

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF252

N-CHANNE POWER MOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF252

N-CHANNEL POWER MOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF252

Nanosecond Switching Speed

DESCRIPTION ?DrainCurrentID=25A@TC=25℃ ?DrainSourceVoltage:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.12Ω(Max) ?NanosecondSwitchingSpeed APPLICATIONS ?Switchingpowersupplies ?Switchingconverters,motordriver,relaydriver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP252

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP252

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP252

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP252

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS252

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISCN252I

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KBPC252

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-25Amperes FEATURES *MetalcaseforMaximumHeatDissipation *Surgeoverloadratings-400Amperes *Lowforwardvoltagedrop

DCCOM

Dc Components

KSR252GLFS

SubminiatureTactSwitchforSMT

CK-COMPONENTS

C&K Components

L-252

CommonModeInductors

RHOMBUS-IND

Rhombus Industries Inc.

L-252

CommonModeInductors

RHOMBUS-IND

Rhombus Industries Inc.

LAVI-252H

FrequencyMixer

MINI

Mini-Circuits

LAVI-252H+

FrequencyMixer

MINI

Mini-Circuits

LAVI-252VH

FrequencyMixer

MINI

Mini-Circuits

LAVI-252VH+

FrequencyMixer

MINI

Mini-Circuits

LAVI-U252VH

FrequencyMixer

MINI

Mini-Circuits

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF252

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    N-CHANNEL POWER MOSFETS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HAR
06+
原廠原裝
4285
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
TO-3
10000
詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-3
9888
專做原裝正品,假一罰百!
 詢價(jià)
IR
21+
TO-3
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
IR
專業(yè)鐵帽
TO-3
500
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
IR
23+
65480
詢價(jià)
IR
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開原型號(hào)增稅票
 詢價(jià)
IR
2020+
TO-3
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
更多IRF252供應(yīng)商 更新時(shí)間2024-12-23 16:03:00

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