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IRF3205ZLPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF3205ZLPBF規(guī)格書詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF3205ZLPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
TO-262 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
IR |
23+ |
NA/ |
4206 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
2020+ |
TO-262 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IR |
24+ |
TO262 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO2623 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-262 |
25630 |
原裝正品 |
詢價 | ||
IR |
22+23+ |
TO-262 |
15273 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
IR |
TO-262 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
Infineon/英飛凌 |
21+ |
TO-262 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
24+ |
TO-262 |
424 |
只做原廠渠道 可追溯貨源 |
詢價 |
