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IRF510N

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRF510N

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510N

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.289?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF510N

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510N

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF

International Rectifier

IRF510N

RepetitiveAvalancheRated

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF510N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF510N

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

IRF

International Rectifier

IRF510PBF

HEXFETPOWERMOSFET

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF510PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF510A_Q

  • 功能描述：

    MOSFET 100V .2 Ohm 33W

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價(jià)
IR/ST/仙童
23+
TO-220
3000
全新原裝
 詢價(jià)
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
IR
102
公司優(yōu)勢(shì)庫存 熱賣中!!
 詢價(jià)
rca
24+
500000
行業(yè)低價(jià),代理渠道
 詢價(jià)
HARRIS
24+/25+
45
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
2016+
TO-262
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
仙童
05+
TO-220
5000
原裝進(jìn)口
 詢價(jià)
更多IRF510A_Q供應(yīng)商 更新時(shí)間2025-4-27 11:04:00

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