| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF630N | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | |
IRF630N | N-Channel Power MOSFETs 200V, 9.3A, 0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRF630N | isc N-Channel MOSFET Transistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF630N | Fast Switching Speed DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF630N | N-Channel MOSFET Transistor DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
IRF630N | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF630N | HEXFET Power MOSFET | IRF International Rectifier | IRF | |
IRF630N | Power MOSFET | TEL TRANSYS Electronics Limited | TEL | |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
N-Channel Power MOSFETs 200V, 9.3A, 0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Isc N-Channel MOSFET Transistor ?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicatio | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Advanced Process Technology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
Advanced Process Technology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
N-Channel Power MOSFETs 200V, 9.3A, 0.30? Features ?UltraLowOn-Resistance -rDS(ON)=0.200?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Advanced Process Technology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
Advanced Process Technology Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET | IRF International Rectifier | IRF | ||
N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET Power MOSFET | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號：
IRF630N
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB
- 功能描述：
MOSFET N TO-220
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達(dá)科技有限公司主營IR系列,現(xiàn)貨供應(yīng)IRF630N,全新原裝,正品供應(yīng)。 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
9500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
123 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IR |
2019 |
TO-220 |
26500 |
原裝正品鉆石品質(zhì)假一賠十 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
2800 |
原廠原裝正品 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
161568 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
03+ |
原廠原裝 |
10000 |
全新原裝 絕對有貨 |
詢價(jià) | ||
IR |
23+ |
T0-220 |
19526 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IRF630NLPBF
- IRF630NSPBF
- IRF630NSTRRPBF
- IRF630R
- IRF630STRLPBF
- IRF634SPBF
- IRF640LPBF
- IRF640NPBF
- IRF640NSTRLPBF
- IRF640NSTRRPBF
- IRF640PBF
- IRF640STRLPBF
- IRF644
- IRF644SPBF
- IRF6607TR1
- IRF6610TR1PBF
- IRF6612TRPBF
- IRF6613TRPBF
- IRF6614TRPBF-CUTTAPE
- IRF6617TR1
- IRF6618TR1
- IRF6619
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- IRF6620TR1PBF
- IRF6621TR1
- IRF6623TRPBF
- IRF6626TR1
- IRF6629TRPBF
- IRF6633TRPBF
- IRF6635TR1PBF-CUTTAPE
- IRF6636TRPBF
- IRF6638TRPBF
- IRF6641TR1PBF/BKN
- IRF6643TRPBF
- IRF6644TRPBF-CUTTAPE
- IRF6645TR1PBF-CUTTAPE
- IRF6646TR1PBF-CUTTAPE
- IRF6648TR1PBF
- IRF6648TRPBF-EL
- IRF6662TRPBF
- IRF6668TRPBF
- IRF6674TRPBF
- IRF6678TR1
- IRF6702M2DTRPBF
- IRF6708S2TR1PBF
相關(guān)庫存
更多- IRF630NPBF
- IRF630NSTRLPBF
- IRF630PBF
- IRF630SPBF
- IRF634PBF
- IRF640
- IRF640NLPBF
- IRF640NSPBF
- IRF640NSTRLPBF-CUTTAPE
- IRF640NSTRRPBF-CUTTAPE
- IRF640SPBF
- IRF640STRRPBF
- IRF644PBF
- IRF644STRLPBF
- IRF6609
- IRF6611TR1
- IRF6613TR1PBF-CUTTAPE
- IRF6614TRPBF
- IRF6616
- IRF6617TRPBF
- IRF6618TRPBF
- IRF6619TR1
- IRF6620TR1
- IRF6620TRPBF
- IRF6622TRPBF
- IRF6626
- IRF6628TRPBF
- IRF6633TR1PBF
- IRF6633TRPBF-CUTTAPE
- IRF6635TRPBF
- IRF6637TR1PBF
- IRF6641TR1PBF
- IRF6643TR1PBF
- IRF6644TRPBF
- IRF6645TR1PBF
- IRF6646TR1/BKN
- IRF6646TRPBF
- IRF6648TRPBF
- IRF6655TRPBF
- IRF6665TRPBF
- IRF6674TR1PBF
- IRF6678
- IRF6678TRPBF
- IRF6706S2TR1PBF
- IRF6710S2TRPBF
