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IRLHM630PBF

BatteryOperatedDCMotorInverterMOSFET

IRF

International Rectifier

IRLHM630TRPBF

BatteryOperatedDCMotorInverterMOSFET

IRF

International Rectifier

IRLI630A

ADVANCEDPOWERMOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLI630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

IRF

International Rectifier

IRLI630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLI630G

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=6.2A)

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630G

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630GPBF

HEXFETPowerMOSFET

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630GPBF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF630STRLPBF

  • 功能描述：

    MOSFET N-Chan 200V 9.0 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay Siliconix
24+
D2PAK(TO-263)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
VISHAY(威世)
23+
TO-263-3
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
IR
24+
TO-263
501311
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
23+
TO-263(D
7300
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
SILICONIXVISHAY
24+
NA
800
原裝現(xiàn)貨,專業(yè)配單專家
 詢價(jià)
IR/VISHAY
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價(jià)
VISHAY
1809+
TO-263
3675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多IRF630STRLPBF供應(yīng)商 更新時(shí)間2025-3-15 14:14:00

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