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IRF7501

Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)

VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe

IRF

International Rectifier

IRF7501PBF

Generation V Technology Ulrtra Low On-Resistance

VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe

IRF

International Rectifier

IRF7503

Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)

VDSS=30V RDS(on)=0.135? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7503PBF

HEXFET? Power MOSFET

VDSS=30V RDS(on)=0.135? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7503TR

Generation V Technology

VDSS=30V RDS(on)=0.135? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7504

Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

VDSS=-20V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7504PBF

HEXFET Power MOSFET

VDSS=-20V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7506

Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

VDSS=-30V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7506

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS=-30V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

IRF7506PBF

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS=-30V RDS(on)=0.27? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF750

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET DUAL NN MICRO-8

  • 功能描述：

    MOSFET, DUAL, NN, MICRO-8

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
17+
MSOP-8
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
IR
23+
MSOP-8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
IR
23+
MSOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
21+
MSOP8
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IR
22+
MSOP-8
8000
原裝正品支持實(shí)單
 詢價(jià)
IR
23+
MSOP8
10880
原裝正品，支持實(shí)單
 詢價(jià)
IR
21+
MSOP8
19600
一站式BOM配單
 詢價(jià)
IR
22+
MSOP-8
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
MSOP-8
69891
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IR
23+
MSOP-8
8000
只做原裝現(xiàn)貨
 詢價(jià)
更多IRF750供應(yīng)商 更新時(shí)間2025-2-2 16:00:00

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