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IRF840STR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840STRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840STRR

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

IRF

International Rectifier

IRF840STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840STRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840STRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):0.638?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI840B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI840G

HEXFETPowerMOSFET(-55V,0.1ohm,-14A)

IRF

International Rectifier

IRFI840G

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRF

International Rectifier

IRFI840G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLC

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.5A)

DESCRIPTION ThisnewseriesofLowChargePowerHEXFETsachievesignificantlylowergatechargeoverconventionalHEXFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFI840GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLCPBF

HEXFETPowerMOSFET

DESCRIPTION ThisnewseriesofLowChargeHEXFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHEXFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Thesedeviceim

IRF

International Rectifier

IRFI840GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GPBF

HEXFET?PowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRF840ST

  • 功能描述:

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-263
36800
詢價(jià)
IR
05+
原廠原裝
10051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
IR
2020+
TO-263
100
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
ICWORK
23+
TRANS
65480
詢價(jià)
IR
24+
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
詢價(jià)
VISHAY/威世
23+
D2PAK
10000
公司只做原裝正品
詢價(jià)
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IRF840STRL
785
785
詢價(jià)
更多IRF840ST供應(yīng)商 更新時(shí)間2024-12-29 16:30:00