首頁 >IRFB3207ZG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFB3207ZG | N-Channel MOSFET Transistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤4.1m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
HEXFETPower MOSFET Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
PELLETDIODES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
TRANSISTOR(NPN) FEATURES ?Powerdissipation PCM:1W(Tamb=25℃) ?Collectorcurrent ICM:100mA ?Collector-basevoltage V(BR)CBO:300V ?Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN |
詳細(xì)參數(shù)
- 型號:
IRFB3207ZG
- 功能描述:
MOSFET MOSFT 75V 170A 4.1mOhm 120nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
20+ |
TO-220AB |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
23+ |
TO-220鐵頭 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
21+ |
TO-220 |
1975 |
詢價 | |||
IR |
23+ |
TO-220AB |
28800 |
公司只做原裝正品 |
詢價 | ||
IR |
23+ |
TO-220AB |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
21+ |
TO-220AB |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
2022 |
TO-220AB |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
22+ |
TO-220AB |
6000 |
十年配單,只做原裝 |
詢價 | ||
IR |
23+ |
TO-220AB |
6000 |
原裝正品,支持實(shí)單 |
詢價 |
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