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IRFB3207ZG

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤4.1m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB3207ZGPBF

HEXFETPower MOSFET

Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En

IRF

International Rectifier

IRFB3207ZPBF

HEXFETPowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRF

International Rectifier

IRFP3207Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS3207

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS3207

HEXFETPowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea

IRF

International Rectifier

IRFS3207PBF

HEXFET?PowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRF

International Rectifier

IRFS3207PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3207PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3207TRLPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3207Z

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS3207ZPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3207ZPBF

HEXFETPowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRF

International Rectifier

IRFSL3207

HEXFETPowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea

IRF

International Rectifier

IRFSL3207PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFSL3207PBF

HEXFET?PowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRF

International Rectifier

IRFSL3207ZPBF

HEXFETPowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRF

International Rectifier

JANN3207

PELLETDIODES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

KSM3207

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KTC3207

TRANSISTOR(NPN)

FEATURES ?Powerdissipation PCM:1W(Tamb=25℃) ?Collectorcurrent ICM:100mA ?Collector-basevoltage V(BR)CBO:300V ?Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號:

    IRFB3207ZG

  • 功能描述:

    MOSFET MOSFT 75V 170A 4.1mOhm 120nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IR
20+
TO-220AB
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
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IR
23+
TO-220鐵頭
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
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IR
21+
TO-220
1975
詢價
IR
23+
TO-220AB
28800
公司只做原裝正品
詢價
IR
23+
TO-220AB
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
21+
TO-220AB
10000
原裝現(xiàn)貨假一罰十
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IR
2022
TO-220AB
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
IR
22+
TO-220AB
6000
十年配單,只做原裝
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IR
23+
TO-220AB
6000
原裝正品,支持實(shí)單
詢價
更多IRFB3207ZG供應(yīng)商 更新時間2024-12-24 15:27:00