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IRFE210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R??RANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE210

SimpleDriveRequirements

IRF

International Rectifier

IRFF210

2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

IRF

International Rectifier

IRFF210

N-ChannelMOSFETinaHermeticallysealedTO39

N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=200V ID=2.25A RDS(ON)=1.5?

SEME-LAB

Seme LAB

IRFL210

PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.96A)

VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A

IRF

International Rectifier

IRFL210

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半導體

IRFL210

SurfaceMount

KERSEMI

Kersemi Electronic Co., Ltd.

IRFL210

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導體

IRFL210PBF

HEXFET?PowerMOSFET

VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A Lead-Free

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFD210R

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 600MA I(D) | TO-250VAR

供應商型號品牌批號封裝庫存備注價格
HARRIS
05+
原廠原裝
5104
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
23+
DIP-4
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR-VISHAY
11+
DIP4
19294
原裝現(xiàn)貨
 詢價
IR
22+
16+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
16+
7000
詢價
IR-VISHAY
23+
DIP4
19296
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IR
23+
HEXDIP
19526
詢價
IR
24+
DIP-4
13500
詢價
SOLID
新
30
全新原裝 貨期兩周
 詢價
更多IRFD210R供應商 更新時間2025-4-26 10:32:00

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