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首頁 >IRFE9120>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFE9120	文件：138.71 Kbytes Page：7 Pages	HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth	IRF International Rectifier	IRF
IRFE9120	文件：23.46 Kbytes Page：2 Pages	P??HANNEL POWER MOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFE9120	文件：138.57 Kbytes Page：7 Pages	Simple Drive Requirements	IRF International Rectifier	IRF
IRFE9120	文件：70.03 Kbytes Page：1 Pages	Multiple Small-Signal Transistors	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
IRFE9120_15	文件：138.57 Kbytes Page：7 Pages	Simple Drive Requirements	IRF International Rectifier	IRF
IRFF9120	文件：42.42 Kbytes Page：2 Pages	P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	SEME-LAB Seme LAB	SEME-LAB
IRFF9120	文件：59.92 Kbytes Page：7 Pages	4A,100V,0.60Ohm,P-ChannelPowerMOSFET 4A,100V,0.60Ohm,P-ChannelPowerMOSFET ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringh	Intersil Intersil Corporation	Intersil
IRFF9120	文件：94.75 Kbytes Page：2 Pages	P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFP9120	文件：278.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFP9120	文件：314.14 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-6A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR/U9120N	文件：3.88766 Mbytes Page：10 Pages	HEXFETPowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：1.89003 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9120	文件：73.44 Kbytes Page：7 Pages	5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFR9120	文件：173.05 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A) DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead	IRF International Rectifier	IRF
IRFR9120	文件：4.04661 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.40688 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.28393 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.40685 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：321.56 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9120	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9120,SiHFR9120) ?Straightlead(IRFU9120,SiHFU9120) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號(hào)：
IRFE9120
制造商：
International Rectifier
功能描述：
TRANS MOSFET P-CH 100V 3.5A 18PIN LCC - Bulk

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	IRFE9120	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市達(dá)恩科技有限公司	IRFE9120	IR	18+	LCC	200	進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190	詢價(jià)
深圳市毅創(chuàng)弘電子科技有限公司	IRFE9120	IR	23+	LCC	66800	原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市藍(lán)山航業(yè)科技有限公司	IRFE9120		24+	長期備有現(xiàn)貨	500000	行業(yè)低價(jià),代理渠道	詢價(jià)
深圳市航宇科工半導(dǎo)體有限公司	IRFE9120	CHINA	22+	LCC-18	640	航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFE9120	IR	22+	LCC	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市川藍(lán)電子科技有限公司	IRFE9120	INFINEON	23+	C-LCC-18	14253	原包裝原標(biāo)現(xiàn)貨,假一罰十,	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFE9120	IR	23+	LCC	8000	只做原裝現(xiàn)貨	詢價(jià)
深圳市賽特興科技有限公司	IRFE9120	IR	QQ咨詢	LCC	72	全新原裝研究所指定供貨商	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFE9120	IR	23+	LCC	7000		詢價(jià)

更多IRFE9120供應(yīng)商更新時(shí)間2025-1-7 9:01:00

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