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IRFR214

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR214

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR214

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR214,SiHFR214) ?Straightlead(IRFU214,SiHFU214) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導體

IRFR214A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR214B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFR214PBF

HEXFET?PowerMOSFET

HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR214) ?StraightLead(IRFU214) ?AvailableinTape&Reel ?FastSwitching ?EaseofParalleling ?Lead-Free

IRF

International Rectifier

IRFR214PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導體

IRFR214PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR214PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR214TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFD214

  • 功能描述：

    MOSFET N-Chan 250V 0.45 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INTERNATIONA
05+
原廠原裝
7016
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
2016+
DIP-4
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IOR
24+
DIP-4P
68
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
VISHAY
1809+
DIP-4
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR-VISHAY
11+
DIP4
19300
原裝現(xiàn)貨
 詢價
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
 詢價
Vishay Siliconix
21+
4DIP
13880
公司只售原裝,支持實單
 詢價
IR
22+
DIP-4
8000
原裝正品支持實單
 詢價
Vishay Siliconix
23+
4DIP
9000
原裝正品，支持實單
 詢價
更多IRFD214供應商 更新時間2025-4-26 10:32:00

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