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IRFD9210

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210

Power MOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETstechnolo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETstechnolo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

HEXFET Power MOSFET

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210PBF

Power MOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9210

SimpleDriveRequirements

IRF

International Rectifier

IRFF9210

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFD9210

  • 功能描述：

    MOSFET P-Chan 200V 0.4 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
05+
DIP-4
3000
全新原裝 絕對(duì)有貨
 詢價(jià)
IR
2016+
DIP-4
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IR
23+
DIP
5000
原裝正品,假一罰十
 詢價(jià)
IOR
24+
DIP-4P
80
詢價(jià)
進(jìn)口原裝
23+
DIP-4
2000
特價(jià)庫存
 詢價(jià)
IR
24+
原廠封裝
1445
原裝現(xiàn)貨假一罰十
 詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IR
2020+
DIP4
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
HD-1
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多IRFD9210供應(yīng)商 更新時(shí)間2025-1-22 10:32:00

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