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IRFD9210PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFD9210PBF規(guī)格書詳情
DESCRIPTION
The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? P-Channel
? Fast Switching
? Ease of Paralleling
? Compliant to RoHS Directive 2002/95/EC
產(chǎn)品屬性
- 型號：
IRFD9210PBF
- 功能描述：
MOSFET P-Chan 200V 0.4 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022 |
DIP4 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
DIP-4 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
VISHAY/威世 |
22+ |
DIP-4 |
18000 |
只做全新原裝,支持BOM配單,假一罰十 |
詢價 | ||
VISHAY |
21+ |
DIP4 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
VISHAY |
2020+ |
DIP4 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
2022+ |
DIP-4 |
8600 |
英瑞芯只做原裝正品 |
詢價 | ||
23+ |
DIP4 |
19526 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | |||
VISHAY(威世) |
23+ |
HVMDIP-4 |
9555 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
22+ |
DIP4 |
8000 |
原裝正品支持實單 |
詢價 | ||
VISHAY |
24+ |
DIP4 |
4000 |
原裝原廠代理 可免費送樣品 |
詢價 |
