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IRFI9530G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530G

Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)

IRF

International Rectifier

IRFI9530G

Power MOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?175°Coperatingtemperature ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530G

P-Channel MOSFET

FEATURES ·DrainCurrent-ID=-7.7A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFI9530G_V01

Power MOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?175°Coperatingtemperature ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9530GPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRFI9530GPBF

P-Channel 100 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRFP9530

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9530

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFI9530G

  • 功能描述：

    MOSFET P-Chan 100V 7.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO 220F
161093
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
03+
原廠原裝
3000
全新原裝 絕對有貨
 詢價
IR
23+
TO-220F
9896
詢價
IR
24+
原廠封裝
75
原裝現(xiàn)貨假一罰十
 詢價
IR
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
23+
TO-220F
8600
全新原裝現(xiàn)貨
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IR
24+
TO-220FullPak(Iso)
8866
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
sil
23+
NA
2186
專做原裝正品,假一罰百!
 詢價
更多IRFI9530G供應商 更新時間2025-1-31 17:10:00

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