零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.077ohm,Id=28A) RDS(on)0.077? ID28A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
31A,100V,0.077Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100V,Rds(on)=0,052ohm,Id=33A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
33A,100V,0.040Ohm,N-ChannelPowerMOSFET Features ?UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.intersil.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | Intersil Intersil Corporation | Intersil | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
Preferredforcommercail-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices. Description ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號:
IRFM140D
- 制造商:
IRF
- 制造商全稱:
International Rectifier
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-254VAR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-254 |
90000 |
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持 |
詢價 | ||
IR |
23+ |
TO-254 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
23+ |
TO-254 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IOR |
2023+ |
原廠封裝 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-254 |
14 |
詢價 | |||
IOR |
1430+ |
TO220 |
5800 |
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
18+ |
TO-254A |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
IR |
24+ |
N/A |
90000 |
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價格合理 |
詢價 | ||
IR |
24+ |
90 |
全新原裝 |
詢價 |
相關(guān)規(guī)格書
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