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IRFN140

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.077ohm,Id=28A)

RDS(on)0.077? ID28A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRF

International Rectifier

IRFN140

SimpleDriveRequirements

IRF

International Rectifier

IRFN140SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP140

31A,100V,0.077Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFP140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

VishayVishay Siliconix

威世科技威世科技半導體

IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP140

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導體

IRFP140A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFP140A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP140N

PowerMOSFET(Vdss=100V,Rds(on)=0,052ohm,Id=33A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFP140N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.intersil.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

Intersil

Intersil Corporation

IRFP140N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP140NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFP140NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFP140NPBF

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

IRFP140PBF

Preferredforcommercail-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.

Description ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP140PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

VishayVishay Siliconix

威世科技威世科技半導體

IRFP140PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRFM140D

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-254VAR

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-254
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
IR
23+
TO-254
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
23+
TO-254
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IOR
2023+
原廠封裝
50000
原裝現(xiàn)貨
詢價
IR
24+
TO-254
14
詢價
IOR
1430+
TO220
5800
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
18+
TO-254A
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
IR
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價格合理
詢價
IR
24+
90
全新原裝
詢價
更多IRFM140D供應(yīng)商 更新時間2024-11-2 17:18:00