首頁 >IRFN340SMD>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFN340SMD | N-CHANNEL POWER MOSFET | SEME-LAB Seme LAB | SEME-LAB | |
11A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=11A) DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?Fast | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMosfet FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowerRDS(ON):0.437?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS BVDSS400V ID8.7A RDS(on)0.55? FEATURES ?HERMETICALLYSEALEDTO-220METALPACKAGE ?SIMPLEDRIVEREQUIREMENTS ?ALLLEADSISOLATEDFROMCASE ?LIGHTWEIGHT ?SCREENINGOPTIONSAVAILABLE | SEME-LAB Seme LAB | SEME-LAB | ||
N??HANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-257AA) | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) PartNumberRDS(on)IDEyelets IRFY340C0.55?8.7ACeramic IRFY340CM0.55?8.7ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-st | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRFN340SMD
- 制造商:
SEME-LAB
- 制造商全稱:
Seme LAB
- 功能描述:
N-CHANNEL POWER MOSFET
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
22+ |
SOP/DIP |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
SOP/DIP |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
SOP/DIP |
7000 |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
22+ |
NA |
30000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON |
23+ |
C-CCN-3 |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價 | ||
CHINA |
22+ |
SMD-1 |
640 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價 | ||
IR |
21+ |
SMD-1 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 |
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