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IRFM250D

N–CHANNEL POWER MOSFET

VDSS200V ID(cont)27.4A RDS(on)0.100? FEATURES ?N–CHANNELMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?HERMETICISOLATEDTO-254PACKAGE ?CERAMICSURFACEMOUNTPACKAGE OPTION

SEME-LAB

Seme LAB

IRFN250

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A)

RDS(on)0.100? ID27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRF

International Rectifier

IRFN250

N??HANNELPOWERMOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFN250

SimpleDriveRequirements

IRF

International Rectifier

IRFN250SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFP250

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRFM250D

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-254VAR

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價格合理
 詢價
IR
24+
24
全新原裝
 詢價
IR
N/A
N/A
100
軍工品,原裝正品
 詢價
IR
18+
原廠原裝假一賠十
24
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠
 詢價
IR
2022+
24
只做原裝,價格優(yōu)惠,長期供貨。
 詢價
IR
22+
N/A
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
SMD
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
SMD
7000
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
24+
SMD
219
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
 詢價
更多IRFM250D供應(yīng)商 更新時間2025-1-17 15:01:00

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