首頁 >IRFM260SCV>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
StandardPowerMOSFET-N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
N-ChannelMOSFETTransistor ·DESCRITION ·HighSpeedPowerSwitching ·FEATURES ·Staticdrain-sourceon-resistance:RDS(on)≤40m? ·Enhancementmode: ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET VDSS=200V RDS(on)=0.04? ID=50A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETP | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤40m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-247packaging ?Easeofparalleling ?Highspeedswitching ?Hardswitchedandhighfrequencycircuits ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspre | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*) 200Volt,0.060?,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號：
IRFM260SCV
- 制造商：
International Rectifier
- 功能描述：
TRANS MOSFET N-CH 200V 35A 3PIN TO-254AA - Bulk
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
NA |
8600 |
原裝正品,歡迎來電咨詢! |
詢價 | |||
IR |
22+ |
TO-254AA |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
INFINEON |
23+ |
M-TO254-3 |
14253 |
原包裝原標現(xiàn)貨,假一罰十, |
詢價 | ||
IR |
23+ |
TO-254AA |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-254AA |
7000 |
詢價 | |||
INFINEON/英飛凌 |
23+ |
TO-254 |
12500 |
代理原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
18+ |
TO-254AA |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
CHINA |
22+ |
TO-254AA |
640 |
航宇科工半導體-央企合格優(yōu)秀供方! |
詢價 | ||
IR |
24+ |
SMD |
1680 |
IR專營品牌進口原裝現(xiàn)貨假一賠十 |
詢價 |
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